Polarization modulation of nanotrenches in GaN (0001)/(0001′) by surface hydrogenation

被引：0
|
作者：
Yayama, Tomoe [1 ,2 ]
Gao, Yanlin [3 ]
Okada, Susumu [3 ]
Chikyow, Toyohiro [2 ]
机构：
[1] National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Tsukuba,305-8568, Japan
[2] International Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), Ibaraki,305-0044, Japan
[3] Graduate School of Pure and Applied Sciences, University of Tsukuba, Ibaraki, Tsukuba,305-8571, Japan
来源：
Japanese Journal of Applied Physics | 2017年 / 56卷 / 11期
关键词：
Number:; JP16H00898; JP16H06331; JP17H01069; Acronym:; KAKEN; Sponsor: Japan Society for the Promotion of Science; -; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology; IAE; Sponsor: Institute of Advanced Energy; Kyoto University;
D O I：
111002
中图分类号：
学科分类号：
摘要：
Gallium nitride
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