Ab initio calculations of B diffusion in SiC

被引：0
作者：
Rurali, R. [1 ,2 ]
Hernaández, E. [2 ]
Godignon, P. [1 ]
Rebollo, J. [1 ]
Ordejoán, P. [2 ]
机构：
[1] Centre Nacional de Microelectrònica, CNM-CSIC, Campus de la UAB, ES-08193 Bellaterra, Barcelona, Spain
[2] Instituto de Ciència de Materials de Barcelona ICMAB-CSIC, Campus de la UAB, ES-08193 Bellaterra, Barcelona, Spain
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
D O I：
10.4028/www.scientific.net/msf.389-393.553
中图分类号：
学科分类号：
摘要：
14
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页码：553 / 556
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