Dependence of ingan quantum well thickness on the nature of optical transitions in leds

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作者：

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, Warsaw ^{[1
]}

01-142, Poland

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来源：

Mater. | 2022年 / 1卷

关键词：

Active regions - Blue shift - Built-in fields - III-Nitride - InGaN quantum wells - Light-emitting device - Lightemitting diode - Molecular-beam epitaxy - Quantum-wells - Well thickness;

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