Transient analysis of InGaN/GaN light-emitting diode with varied quantum well number

被引：0
|
作者：
Chen, Gui-Chu [1 ,2 ]
Fan, Guang-Han [1 ]
机构：
[1] Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631, China
[2] Department of Physics, Zhaoqing University, Zhaoqing 526061, China
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2013年 / 34卷 / 10期
关键词：
D O I：
10.3788/fgxb20133410.1346
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1346 / 1350
相关论文
共 50 条
  • [21] InGaN/GaN nanorod array white light-emitting diode
    Lin, Hon-Way
    Lu, Yu-Jung
    Chen, Hung-Ying
    Lee, Hong-Mao
    Gwo, Shangjr
    APPLIED PHYSICS LETTERS, 2010, 97 (07)
  • [22] Computational study of an InGaN/GaN nanocolumn light-emitting diode
    Boecklin, Christoph
    Veprek, Ratko G.
    Steiger, Sebastian
    Witzigmann, Bernd
    PHYSICAL REVIEW B, 2010, 81 (15):
  • [23] InGaN/GaN light-emitting diode microwires of submillimeter length
    Lundin, W. V.
    Rodin, S. N.
    Sakharov, A. V.
    Lundina, E. Yu.
    Usov, S. O.
    Zadiranov, Yu. M.
    Troshkov, S. I.
    Tsatsulnikov, A. F.
    SEMICONDUCTORS, 2017, 51 (01) : 100 - 103
  • [24] InGaN/GaN light-emitting diode with a polarization tunnel junction
    Zhang, Zi-Hui
    Tan, Swee Tiam
    Kyaw, Zabu
    Ji, Yun
    Liu, Wei
    Ju, Zhengang
    Hasanov, Namig
    Sun, Xiao Wei
    Demir, Hilmi Volkan
    APPLIED PHYSICS LETTERS, 2013, 102 (19)
  • [25] InGaN/GaN light-emitting diode microwires of submillimeter length
    W. V. Lundin
    S. N. Rodin
    A. V. Sakharov
    E. Yu. Lundina
    S. O. Usov
    Yu. M. Zadiranov
    S. I. Troshkov
    A. F. Tsatsulnikov
    Semiconductors, 2017, 51 : 100 - 103
  • [26] Scanning electron microscopy cathodoluminescence studies of piezoelectric fields in an InGaN/GaN quantum-well light-emitting diode
    Bunker, KL
    Garcia, R
    Russell, PE
    APPLIED PHYSICS LETTERS, 2005, 86 (08) : 1 - 3
  • [27] Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array
    Tu, Charng-Gan
    Liao, Che-Hao
    Yao, Yu-Feng
    Chen, Horng-Shyang
    Lin, Chun-Han
    Su, Chia-Ying
    Shih, Pei-Ying
    Chen, Wei-Han
    Zhu, Erwin
    Kiang, Yean-Woei
    Yang, C. C.
    OPTICS EXPRESS, 2014, 22 (25): : A1799 - A1809
  • [28] Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode
    Wen F.
    Huang L.
    Tong L.
    Huang D.
    Liu D.
    Frontiers of Optoelectronics in China, 2009, 2 (4): : 446 - 449
  • [29] Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation
    Prudaev, Ilya
    Sarkisov, Sergey
    Tolbanov, Oleg
    Kosobutsky, Alexey
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (05): : 946 - 951
  • [30] Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode
    Feng WEN
    Lirong HUANG
    Liangzhu TONG
    Dexiu HUANG
    Deming LIU
    Frontiers of Optoelectronics in China, 2009, 2 (04) : 446 - 449
12345