Performance degradation in CZ(B) cells and improved stability high efficiency PERT and PERL silicon cells on a variety of SEH MCZ(B), FZ(B) and CZ(Ga) substrates

被引：0
|
作者：
Zhao, Jianhua [1 ]
Wang, Aihua [1 ]
Green, Martin A. [1 ]
机构：
[1] Photovoltaics Spec. Research Centre, University of New South Wales, Sydney, NSW 2052, Australia
来源：
Progress in Photovoltaics: Research and Applications | 2000年 / 8卷 / 05期
关键词：
Crystal growth from melt - Degradation - Diffusion - Electric potential - Passivation - Semiconductor doping - Substrates;
D O I：
10.1002/1099-159X(200009/10)8:53.0.CO;2-Y
中图分类号：
学科分类号：
摘要：
Cells made on CZ(B) (boron doped Czochralski) silicon substrates often exhibit degraded minority carrier lifetimes corresponding to poorer cell performance. This article discusses cell results on a variety of CZ(B) substrates. It also describes work avoiding this CZ(B) degradation problem by using different substrate growth methods or different dopants.
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页码：549 / 558
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