Subsurface damage distribution in silicon wafers ground with wafer rotation grinding method

被引：8

作者：

Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China ^{[1
]}

机构：

[1] Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian University of Technology

来源：

Jixie Gongcheng Xuebao | 2013年 / 3卷 / 88-94期

关键词：

Diamond wheel; Grinding; Silicon wafers; Subsurface damage;

D O I：

10.3901/JME.2013.03.088

中图分类号：

学科分类号：

摘要：

During the integrated circuit manufacturing process, ultra-precision grinding based on the principle of wafer rotation grinding is an important method in flattening of silicon wafers and in back-thinning of the completed device wafers, but the surface/subsurface damage is generated inevitably in ground silicon wafers. The subsurface damage distribution in ground silicon wafer has great significance in analyzing the reason of wafer bow/warp and determining the wafer removal thickness of subsequent process. Using the angle cross-section microscopy, the subsurface damage distributions in different crystal orientations and radial locations of silicon wafers ground with wafer rotation grinding method are investigated, and the effect of spark-out process on the subsurface damage distribution is analyzed. The experiment results show that in the ground wafer without spark-out process, the subsurface damage depth in <110> crystal orientation is larger than that in <100> crystal orientation and the subsurface damage depth increases along the radical direction from the centre to the edge; but in the ground wafer with spark-out process, the subsurface damage depths in different crystal orientations and radial locations are almost the same. And the subsurface damage depth in ground silicon wafers with spark-out process is significantly smaller than that without spark-out process. © 2013 Journal of Mechanical Engineering.

引用

页码：88 / 94

页数：6

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