Crystallinity of thin silicon films deposited at low temperatures: Combined effect of biasing and structuring the substrate

被引：0

作者：

Birkholz, Mario ^{[1
,2
]}

Conrad, Erhard ^{[1
]}

Fuhs, Walther ^{[1
]}

机构：

[1] Hahn-Meitner-Institut, Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany

[2] Fraunhofer-Institut für Schicht- und Oberflächentechnik, Bienroder Weg 54 E, 38108 Braunschweig, Germany

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 6 A期

关键词：

Chemical vapor deposition - Crystalline materials - Deposition - Electron cyclotron resonance - Grain size and shape - Low temperature operations - Polycrystalline materials - Semiconductor growth - Substrates - Surface structure - Thin films - X ray diffraction analysis;

D O I：

10.1143/jjap.40.4176

中图分类号：

学科分类号：

摘要：

The improvement of crystallinity of thin silicon films by (i) controlling the ion flux to the substrate and (ii) structuring the substrate surface is demonstrated. Films were deposited by electron-cyclotron resonance chemical-vapor deposition (ECR CVD) at 600 K on grooved substrates that were located on a dc-biased susceptor. The degree of crystallinity as determined by Raman spectroscopy and electron microscopy improved with increasing susceptor bias VS, which is explained in terms of the local heating of the film surface during initial growth. For VS = 15 V a pronounced increase of grain size was observed by X-ray diffraction that is accompanied by a texture inversion from (110)-to (111)-preferred orientation. The effect is discussed in terms of an ion-assisted reaction step on the surface of the growing film.

引用

页码：4176 / 4180