Design of InGaP/GaAs HBT microwave power amplifier

被引：0
|
作者：
Qian, Yongxue [1 ]
Liu, Xunchun [1 ]
机构：
[1] Microelectronics R and D Ctr., Chinese Acad. of Sci., Beijing 100029, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2003年 / 24卷 / 07期
关键词：
D O I：
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学科分类号：
摘要：
Heterojunction bipolar transistors
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页码：753 / 757
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