Observation of lattice undulation of commercial bonded silicon-on-insulator wafers by synchrotron X-ray topography

被引:0
|
作者
Fukuda, Kazunori [1 ]
Yoshida, Takayoshi [1 ]
Shimura, Takayoshi [1 ]
Yasutake, Kiyoshi [1 ]
Umeno, Masataka [2 ]
机构
[1] Dept. of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
[2] Department of Management Science, Faculty of Engineering, Fukui University of Technology, 3-6-1 Gakuen, Fukui 910-8585, Japan
来源
| 1600年 / Japan Society of Applied Physics卷 / 41期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] THE EFFECT OF BONDED INTERFACE ON ELECTRICAL-PROPERTIES OF BONDED SILICON-ON-INSULATOR WAFERS
    LING, L
    RADZIMSKI, ZJ
    ABE, T
    SHIMURA, F
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) : 3610 - 3616
  • [32] Synchrotron-radiation X-ray topography of surface strain in large-diameter silicon wafers
    Kawado, S
    Iida, S
    Yamaguchi, S
    Kimura, S
    Hirose, Y
    Kajiwara, K
    Chikaura, Y
    Umeno, M
    JOURNAL OF SYNCHROTRON RADIATION, 2002, 9 : 166 - 168
  • [33] Effect of ultrathin top silicon layers on the X-ray photoelectron emission from the buried oxide in silicon-on-insulator wafers
    Katayama, T
    Yamamoto, H
    Ikeno, M
    Mashiko, Y
    Kawazu, S
    Umeno, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (9AB): : L1058 - L1061
  • [34] Residual lattice strain in thin silicon-on-insulator bonded wafers: Effects on electrical properties and Raman shifts
    Iida, T
    Itoh, T
    Noguchi, D
    Takanashi, Y
    Takano, Y
    Kanda, Y
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (04) : 2109 - 2114
  • [35] Slow decay of excess carrier concentration in bonded silicon-on-insulator wafers
    Hirano, M
    Ichimura, M
    Arai, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (12A): : 6513 - 6514
  • [36] Characterization of patterned oxide buried in bonded silicon-on-insulator wafers by near-infrared scattering topography and microscopy
    Department of Precision Science and Technology, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    不详
    Japanese Journal of Applied Physics, 2008, 47 (4 PART 2): : 2511 - 2514
  • [37] SYNCHROTRON X-RAY TOPOGRAPHY
    MOORE, M
    RADIATION PHYSICS AND CHEMISTRY, 1995, 45 (03): : 427 - 444
  • [38] Characterization of patterned oxide buried in bonded silicon-on-insulator wafers by near-infrared scattering topography and microscopy
    Wu, Xing
    Uchikoshi, Junichi
    Hirokane, Takaaki
    Yamada, Ryuta
    Takeuchi, Akihiro
    Arima, Kenta
    Morita, Mizuho
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2511 - 2514
  • [39] Slow decay of excess carrier concentration in bonded silicon-on-insulator wafers
    Hirano, Masashi
    Ichimura, Masaya
    Arai, Eisuke
    Japanese journal of applied physics, 2000, 39 (12 A) : 6513 - 6514
  • [40] Observation of macrodefects in silicon by the methods of X-ray topography
    Mil'vidskij, M.G.
    Osip'yan, Yu.A.
    Smirnova, I.A.
    Suvorov, E.V.
    Shulakov, E.V.
    Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya, 2001, (06): : 5 - 12