Observation of lattice undulation of commercial bonded silicon-on-insulator wafers by synchrotron X-ray topography

被引:0
|
作者
Fukuda, Kazunori [1 ]
Yoshida, Takayoshi [1 ]
Shimura, Takayoshi [1 ]
Yasutake, Kiyoshi [1 ]
Umeno, Masataka [2 ]
机构
[1] Dept. of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
[2] Department of Management Science, Faculty of Engineering, Fukui University of Technology, 3-6-1 Gakuen, Fukui 910-8585, Japan
来源
| 1600年 / Japan Society of Applied Physics卷 / 41期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Characterization of the silicon on insulator film in bonded wafers by high resolution x-ray diffraction
    Cohen, GM
    Mooney, PM
    Jones, EC
    Chan, KK
    Solomon, PM
    Wong, HSP
    APPLIED PHYSICS LETTERS, 1999, 75 (06) : 787 - 789
  • [22] SILICON-ON-INSULATOR FILMS OBTAINED BY ETCHBACK OF BONDED WAFERS
    HARENDT, C
    APPEL, W
    GRAF, HG
    HOFFLINGER, B
    PENTEKER, E
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (11) : 3547 - 3548
  • [23] INSITU OBSERVATION OF SOLIDIFICATION OF SILICON STEEL BY SYNCHROTRON RADIATION X-RAY TOPOGRAPHY
    MATSUMIYA, T
    YAMADA, W
    OHASHI, T
    NITTONO, O
    METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1987, 18 (04): : 723 - 727
  • [24] Synchrotron X-ray topography of supercritical-thickness strained silicon-on-insulator wafers for crystalline quality evaluation and electrical characterization using back-gate transistors
    Shimura, T.
    Shimokawa, D.
    Matsumiya, T.
    Morimoto, N.
    Ogura, A.
    Iida, S.
    Hosoi, T.
    Watanabe, H.
    CURRENT APPLIED PHYSICS, 2012, 12 : S69 - S74
  • [25] NONDESTRUCTIVE EVALUATION OF SILICON-ON-INSULATOR SUBSTRATES USING X-RAY DOUBLE CRYSTAL TOPOGRAPHY
    MA, DI
    CAMPISI, GJ
    QADRI, SB
    PECKERAR, MC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 1006 - 1011
  • [26] An x-ray method for quality inspection of thermocompression-bonded "silicon-on-insulator" structures
    Skupov, VD
    Shcherbakova, IA
    INDUSTRIAL LABORATORY, 1998, 64 (03): : 162 - 165
  • [27] Grazing incidence synchrotron X-ray topography as a tool for denuded zone studies of silicon wafers
    Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 Hut, Finland
    不详
    J X Ray Sci Technol, 3 (159-169):
  • [28] Residual lattice strain in thin silicon-on-insulator bonded wafers: Thermal behavior and formation mechanisms
    Iida, T
    Itoh, T
    Noguchi, D
    Takano, Y
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (02) : 675 - 681
  • [29] Residual stresses at cavity corners in silicon-on-insulator bonded wafers
    Lin, T-W
    Elkhatib, O.
    Makinen, J.
    Palokangas, M.
    Johnson, H. T.
    Horn, G. P.
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2013, 23 (09)
  • [30] IN SITU OBSERVATION OF SOLIDIFICATION OF SILICON STEEL BY SYNCHROTRON RADIATION X-RAY TOPOGRAPHY.
    Matsumiya, Tooru
    Yamada, Wataru
    Ohashi, Tetsuro
    Nittono, Osamu
    Metallurgical transactions. A, Physical metallurgy and materials science, 1987, 18 A (05): : 723 - 727