Observation of lattice undulation of commercial bonded silicon-on-insulator wafers by synchrotron X-ray topography

被引：0
|
作者：
Fukuda, Kazunori [1 ]
Yoshida, Takayoshi [1 ]
Shimura, Takayoshi [1 ]
Yasutake, Kiyoshi [1 ]
Umeno, Masataka [2 ]
机构：
[1] Dept. of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
[2] Department of Management Science, Faculty of Engineering, Fukui University of Technology, 3-6-1 Gakuen, Fukui 910-8585, Japan
来源：
| 1600年 / Japan Society of Applied Physics卷 / 41期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] Characterization of surface imperfections of silicon-on-insulator wafers by means of extremely asymmetric x-ray reflection topography
    Kimura, S
    Ogura, A
    Ishikawa, T
    APPLIED PHYSICS LETTERS, 1996, 68 (05) : 693 - 695
  • [12] X-ray diffraction topography at a synchrotron radiation source applied to the study of bonded silicon on insulator material
    Härtwig, J
    Köhler, S
    Ludwig, W
    Moriceau, H
    Ohler, M
    Prieur, E
    CRYSTAL RESEARCH AND TECHNOLOGY, 2002, 37 (07) : 705 - 715
  • [13] X-ray diffraction topography at a synchrotron radiation source applied to the study of bonded silicon on insulator material
    Härtwig, J.
    Köhler, S.
    Ludwig, W.
    Moriceau, H.
    Ohler, M.
    Prieur, E.
    2002, Wiley-VCH Verlag (37)
  • [14] PLASMA THINNING OF SILICON-ON-INSULATOR BONDED WAFERS
    GARDOPEE, GJ
    MUMOLA, PB
    CLAPIS, PJ
    ZAROWIN, CB
    BOLLINGER, LD
    LEDGER, AM
    MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 347 - 350
  • [15] Characterization of SOI wafers by synchrotron X-ray topography
    Shimura, T
    Fukuda, K
    Yasutake, K
    Umano, M
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3): : 439 - 442
  • [16] X-ray reflectivity of silicon on insulator wafers
    Eymery, J
    Rieutord, F
    Fournel, F
    Buttard, D
    Moriceau, H
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (1-3) : 31 - 33
  • [17] Investigation of Si/SiGe/Si on bonded silicon-on-insulator by triple-axis X-ray diffraction and synchrotron radiation double-crystal topography
    Ma, TD
    Tu, HL
    Hu, GY
    Shao, BL
    Liu, AS
    JOURNAL OF CRYSTAL GROWTH, 2006, 289 (02) : 489 - 493
  • [18] ANALYSIS OF STRUCTURAL DEFECTS IN SILICON-ON-INSULATOR LAYERS WITH X-RAY REFLECTION TOPOGRAPHY
    THEUNISSEN, MJJ
    GOEMANS, AH
    DEKOCK, AJR
    GEIJSELAERS, MLJ
    JOURNAL OF CRYSTAL GROWTH, 1989, 97 (3-4) : 599 - 606
  • [19] Metrology of Silicon Wafers Through Synchrotron Section Topography and X-Ray Diffraction Imaging
    Xin, Xiao
    Gorji, Nima E.
    Tseng, Ming-Lang
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2024, 14 (07): : 1164 - 1171
  • [20] Characterization of the silicon on insulator film in bonded wafers by high resolution X-ray diffraction
    IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, United States
    Appl Phys Lett, 6 (787-789):
12345