Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes

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作者：
机构：
[1] Konishi, Kumiko
[2] Kameshiro, Norifumi
[3] Yokoyama, Natsuki
[4] Shima, Akio
[5] Shimamoto, Yasuhiro
来源：
Konishi, Kumiko (kumiko.konishi.qo@hitachi.com) | 2017年 / Japan Society of Applied Physics卷 / 56期
关键词：
701.1 Electricity: Basic Concepts and Phenomena - 714.2 Semiconductor Devices and Integrated Circuits - 804.2 Inorganic Compounds;
D O I：
121301
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摘要：
29
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