Scattering suppression at MOS interface towards high-mobility Si-based field-effect transistors

被引：0

作者：

Zhao, Shuai ^{[1
,2
]}

Yuan, Guodong ^{[1
,2
,4
]}

Zhang, Di ^{[1
,2
]}

Wu, Xingjun ^{[4
]}

Han, Weihua ^{[2
,3
,4
]}

机构：

[1] State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing,100083, China

[2] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing,100049, China

[3] Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing,100083, China

[4] Beijing Academy of Quantum Information Sciences, Beijing,100193, China

来源：

Materials Science in Semiconductor Processing | 2022年 / 138卷

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Annealing - Metals - Silica - Optimization - Semiconductor quantum dots - Quantum computers - Silicon - Quantum Hall effect - Two dimensional electron gas - Drain current - MOSFET devices - Oxide semiconductors

引用