Charge-state control of phosphorus donors in silicon-on-insulator metal-oxide-semiconductor field-effect transistor

被引：0
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作者：
Ono, Yukinori [1 ]
Nishiguchi, Katsuhiko [1 ]
Inokawa, Hiroshi [1 ]
Horiguchi, Seiji [2 ]
Takahashi, Yasuo [3 ]
机构：
[1] NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
[2] Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University, 1-1 Tegata-gakuen-machi, Akita-shi, Akita 010-8502, Japan
[3] Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Hokkaido 060-0814, Japan
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 4 B卷 / 2588-2591期
关键词：
Compendex;
D O I：
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学科分类号：
摘要：
Diffusion - Fabrication - Gates (transistor) - Interfaces (materials) - MOSFET devices - Silicon - Silicon on insulator technology - Substrates
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