Properties of (200) oriented, highly conductive SnO2 thin films by chemical spray pyrolysis from non-aqueous medium: Effect of antimony doping

被引：55

作者：

Yadav, Abhijit A. ^{[1
]}

Pawar, S. C. ^{[1
]}

Patil, D. H. ^{[1
]}

Ghogare, M. D. ^{[1
]}

机构：

[1] Rajarshi Shahu Mahavidyalaya, Dept Phys Elect & Photon, Thin Film Phys Lab, Latur 413512, MS, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 652卷

关键词：

Thin films; Chemical synthesis; Electrical transport; X-ray diffraction; DOPED TIN OXIDE; OPTOELECTRONIC PROPERTIES; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; DEPOSITION; PHOTOLUMINESCENCE; DEFECTS; SURFACE; GROWTH; ZN;

D O I：

10.1016/j.jallcom.2015.08.197

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Recently metal oxide thin films are extensively investigated because of their potential applications in solar energy conversion. In the present paper, Transparent conducting antimony doped tin oxide (Sb: SnO2) thin films have been deposited by spray pyrolysis technique at various antimony doping concentrations from non-aqueous solvent Propan-2-ol. XRD studies show that all films are polycrystalline with tetragonal crystal structure. The crystallite size observed is in the range 29-37 nm for various Sb doping concentrations. The surface morphology of Sb: SnO2 thin film is spherical with the continuous distribution of grains. The average transmittance of the undoped and Sb: SnO2 thin films, measured in the 450-850 nm wavelength is ranging between 70 and 95%. The best results are obtained at 1.5 wt.% Sb doping concentration, which are direct band gap of 3.82 eV, minimum sheet resistance of 5.7 Omega/cm(2), lowest resistivity of 3.76 x 10(-4) U-cm, carrier concentration and mobility of 4.46 x 10(19) cm(-3) and 372 cm(2) V-1 s(-1), respectively. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：145 / 152

页数：8