Research on parameter extraction method for GaN HEMTs small signal equivalent circuit model

被引：0

作者：

Wen, Zhang ^{[1
]}

Xu, Yuehang ^{[1
]}

Xu, Ruimin ^{[1
]}

机构：

[1] University of Electronic Science and Technology of China, Chengdu, 611731, Sichuan

来源：

Dianbo Kexue Xuebao/Chinese Journal of Radio Science | 2015年 / 30卷 / 04期

关键词：

GaN HEMT; Iteration; Parameter extraction; Small signal modeling; Wideband;

D O I：

10.13443/j.cjors.2014090802

中图分类号：

学科分类号：

摘要：

This paper proposes an efficient parameter extraction algorithm for GaN high electron mobility transistor (HEMTs) small signal equivalent circuit model, which combines parameter scanning and iteration methods, to solve the problem of error accumulation in conventional methods. By using the iteration process, the algorithm each time uses more accurate element values, which makes the results faster and easier become optimal. The 19 elements small signal equivalent circuit model of GaN HEMTs is used to validate the proposed algorithm, and the results show that the calculated S-parameters agree well with the measured S-parameters within the frequency range of 0.1 GHz to 40 GHz. Copyright © 2015 by Editorial Department of Chinese Journal of Radio Science

引用

页码：772 / 776

页数：4

共 9 条

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