Mass transport of AlxGa1-xN

被引：0

作者：

Nitta, S. ^{[1
]}

Yukawa, Y. ^{[1
]}

Watanabe, Y. ^{[1
]}

Kamiyama, S. ^{[2
,3
]}

Amano, H. ^{[2
,3
]}

Akasaki, I. ^{[2
,3
]}

机构：

[1] Dept. of Elec. and Electronic Eng., Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, 468-8502 Nagoya, Japan

[2] Dept. of Material Sci. and Eng., Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, 468-8502 Nagoya, Japan

[3] High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, 468-8502 Nagoya, Japan

来源：

Physica Status Solidi (A) Applied Research | 2002年 / 194卷 / 2 SPEC.期

关键词：

Annealing - Composition - Diffusion - Least squares approximations - Mass transfer - Metallorganic vapor phase epitaxy - Photolithography - Photoluminescence - Reactive ion etching - Surface roughness - Thermodynamic stability - Transport properties;

D O I：

10.1002/1521-396x(200212)194:23.0.co;2-%23

中图分类号：

学科分类号：

摘要：

AlxGa1-xN having square trenches on its surface showed a different mass transport (MT) property for each AlN molar fraction. We also found that the MT process was interrupted at a certain stage, after which no MT occurred. The volume of the transported region decreased with increasing AlN molar fraction. MT was not observed in AlxGa1-xN with x higher than 0.06. The photoluminescence (PL) peak from the transported region measured by micro-PL mapping was 363 nm in all samples, which indicates that the transported region was composed of GaN rather than AlxGa1-xN. The root mean square surface roughness of AlxGa1-xN after annealing drastically decreased with increasing AlN molar fraction. This is due to the thermal stability of AlN and low diffusibility of Al on the surface. As a result, the terrace region became AlN rich, which caused interruption of MT.

引用

页码：485 / 488

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