Performance and reliability improvement of low-power embedded flash memory with shallow trench isolation structure

被引:0
作者
Huang, Heng-Sheng [1 ,3 ]
Su, Jason [1 ]
Lee, Dong-Lung [1 ]
Lin, Chih-Hung [2 ]
Ting, Wen-Chi [2 ]
Hong, Gary [2 ]
机构
[1] Institute of Mechatronics, National Taipei University of Technology, Taipei, Taiwan
[2] Specialty Technology Division, United Microelectronics Corporation, Hsin-Chu, Taiwan
[3] Institute of Manufacturing, National Taipei University of Technology, Taipei, Taiwan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 2 A期
关键词
D O I
10.1143/jjap.40.551
中图分类号
学科分类号
摘要
15
引用
收藏
页码:551 / 556
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