Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations

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[1] Cottom, J.
[2] Gruber, G.
[3] Pobegen, G.
[4] Aichinger, T.
[5] Shluger, A.L.
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| 1600年 / American Institute of Physics Inc.卷 / 124期
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Number:; EP/G036675/1; EP/L000202/1; Acronym:; EPSRC; Sponsor: Engineering and Physical Sciences Research Council; EP/L000202; RPG-2016-135; -; Sponsor: Leverhulme Trust;
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