Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations

被引：0
|
作者：
机构：
[1] Cottom, J.
[2] Gruber, G.
[3] Pobegen, G.
[4] Aichinger, T.
[5] Shluger, A.L.
来源：
| 1600年 / American Institute of Physics Inc.卷 / 124期
关键词：
Number:; EP/G036675/1; EP/L000202/1; Acronym:; EPSRC; Sponsor: Engineering and Physical Sciences Research Council; EP/L000202; RPG-2016-135; -; Sponsor: Leverhulme Trust;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Passivation of the 4H-SiC/SiO2 interface with nitric oxide
    Williams, JR
    Chung, GY
    Tin, CC
    McDonald, K
    Farmer, D
    Chanana, RK
    Weller, RA
    Pantelides, ST
    Holland, OW
    Das, MK
    Feldman, LC
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 967 - 972
  • [32] TEM Observation Of SiO2/4H-SiC Hetero Interface
    Matsuhata, Hirofumi
    Senzaki, Junji
    Nagai, Ichiro
    Yamaguchi, Hirotaka
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 671 - 674
  • [33] Observation of carbon clusters at the 4H-SiC/SiO2 interface
    Afanas'ev, V.V.
    Stesmans, A.
    Harris, C.I.
    Materials Science Forum, 1998, 264-268 (pt 2): : 857 - 860
  • [34] Shallow electron traps at the 4H-SiC/SiO2 interface
    Afanas'ev, VV
    Stesmans, A
    Bassler, M
    Pensl, G
    Schulz, MJ
    APPLIED PHYSICS LETTERS, 2000, 76 (03) : 336 - 338
  • [35] Interface reactivity of Pr and SiO2 at 4H-SiC(0001)
    Schmeisser, D
    Lupina, G
    Muessig, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 118 (1-3): : 19 - 22
  • [36] SIMS analyses of SiO2/4H-SiC(0001) interface
    Yamashita, K
    Kitabatake, M
    Kusumoto, P
    Takahashi, K
    Uchida, M
    Miyanaga, R
    Itoh, H
    Yoshikawa, M
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1037 - 1040
  • [37] Interface defects in SiC power MOSFETs - an electrically detected magnetic resonance study based on spin dependent recombination
    Gruber, Gernot
    Hadley, Peter
    Koch, Markus
    Peters, Dethard
    Aichinger, Thomas
    INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013, 2014, 1583 : 165 - 168
  • [38] Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy
    Umeda, T.
    Kim, G-W
    Okuda, T.
    Sometani, M.
    Kimoto, T.
    Harada, S.
    APPLIED PHYSICS LETTERS, 2018, 113 (06)
  • [39] Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance
    Waskiewicz, Ryan J.
    Anders, Mark A.
    Lenahan, Patrick M.
    Lelis, Aivars J.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 197 - 203
  • [40] Impact of Ionizing Radiation on the SiO2/SiC Interface in 4H-SiC BJTs
    Usman, Muhammad
    Buono, Benedetto
    Hallen, Anders
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (12) : 3371 - 3376
12345