New insights in the passivation of high-k/InP through interface characterization and metal-oxide-semiconductor field effect transistor demonstration: Impact of crystal orientation

被引：0

作者：

Xu, Min ^{[1
]}

Gu, Jiangjiang J. ^{[1
]}

Wang, Chen ^{[1
]}

Zhernokletov, D.M. ^{[2
]}

Wallace, R.M. ^{[2
]}

Ye, Peide D. ^{[1
]}

机构：

[1] Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906, United States

[2] Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United States

来源：

Journal of Applied Physics | 2013年 / 113卷 / 01期

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摘要：

引用

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