New insights in the passivation of high-k/InP through interface characterization and metal-oxide-semiconductor field effect transistor demonstration: Impact of crystal orientation

被引：0
|
作者：
Xu, Min [1 ]
Gu, Jiangjiang J. [1 ]
Wang, Chen [1 ]
Zhernokletov, D.M. [2 ]
Wallace, R.M. [2 ]
Ye, Peide D. [1 ]
机构：
[1] Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906, United States
[2] Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United States
来源：
Journal of Applied Physics | 2013年 / 113卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal-Oxide-Semiconductor Field-Effect Transistors
    Iijima, Ryosuke
    Edge, Lisa F.
    Bruley, John
    Paruchuri, Vamsi
    Takayanagi, Mariko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (06)
  • [12] Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor
    Lim, Han Jin
    Kim, Youngkuk
    Jeon, In Sang
    Yeo, Jaehyun
    Im, Badro
    Hong, Soojin
    Kim, Bong-Hyun
    Nam, Seok-Woo
    Kang, Ho-Kyu
    Jung, E. S.
    APPLIED PHYSICS LETTERS, 2013, 102 (23)
  • [13] Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal-Oxide-Semiconductor Field-Effect Transistor
    Eriguchi, Koji
    Kamei, Masayuki
    Takao, Yoshinori
    Ono, Kouichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (10)
  • [14] Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor
    Kundu, Souvik
    Halder, Nripendra N.
    Biswas, D.
    Banerji, P.
    Shripathi, T.
    Chakraborty, S.
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (03)
  • [15] Impact of native defects in high-k dielectric oxides on GaN/oxide metal-oxide-semiconductor devices
    Choi, Minseok
    Lyons, John L.
    Janotti, Anderson
    Van de Walle, Chris G.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2013, 250 (04): : 787 - 791
  • [16] High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Field-Effect Transistors [Invited]
    Koide, Yasuo
    2019 IEEE 32ND INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2019, : 40 - 46
  • [17] High-k InGaAs metal-oxide-semiconductor field-effect-transistors with various barrier layer materials
    Xue, Fei
    Zhao, Han
    Chen, Yen-Ting
    Wang, Yanzhen
    Zhou, Fei
    Lee, Jack C.
    APPLIED PHYSICS LETTERS, 2011, 99 (03)
  • [18] Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure
    Wang, Xiaolei
    Han, Kai
    Wang, Wenwu
    Chen, Shijie
    Ma, Xueli
    Chen, Dapeng
    Zhang, Jing
    Du, Jun
    Xiong, Yuhua
    Huang, Anping
    APPLIED PHYSICS LETTERS, 2010, 96 (15)
  • [19] Impact of Local High-k Insulator on Drivability and Standby Power of Gate-All-Around Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
    Omura, Yasuhisa
    Hayashi, Osanori
    Nakano, Shunsuke
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04) : 0443031 - 0443036
  • [20] Defect properties of high-k/metal-gate metal-oxide-semiconductor field-effect transistors determined by characterization of random telegraph noise
    Wu, San-Lein
    Chiu, Hsu-Feng
    Chang, Yee-Shyi
    Cheng, Osbert
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (03)
12345