New insights in the passivation of high-k/InP through interface characterization and metal-oxide-semiconductor field effect transistor demonstration: Impact of crystal orientation

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作者：
Xu, Min [1 ]
Gu, Jiangjiang J. [1 ]
Wang, Chen [1 ]
Zhernokletov, D.M. [2 ]
Wallace, R.M. [2 ]
Ye, Peide D. [1 ]
机构：
[1] Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906, United States
[2] Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United States
来源：
Journal of Applied Physics | 2013年 / 113卷 / 01期
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