Analytical consideration of quantum-confined stark-effect and interband optical transitions in semiconductor quantum well

被引:0
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作者
机构
[1] State Engineering University of Armenia, Gyumri Branch, 3103, Gyumri
[2] Russian-Armenian (Slavonic) University, 0051Yerevan
关键词
Dipole transitions; Electric field; Electroabsorption; Quantum well; Semiconductor film; Size quantization;
D O I
10.2174/1876402911305010011
中图分类号
学科分类号
摘要
In the regime of strong quantization single-electron states are considered theoretically in the wide-band semiconductor film, placed in a homogeneous electrostatic field. For a certain range of values of the external field, explicit expressions were obtained for the energy spectrum and envelope wave functions of charge carriers in the film. The dependence of the parameters of direct interband electro-optical transitions in the film on the intensity of the external field and the effective mass of charge carriers was also considered. © 2013 Bentham Science Publishers.
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页码:61 / 69
页数:8
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