Demonstration of a high performance 40-nm-gate carbon nanotube field-effect transistor

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作者：
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 [1 ]
不详 [2 ]
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来源：
IEEE Electron Devices Society | 1600年 / 113-114卷 / 2005期
关键词：
Compendex;
D O I：
63rd Device Research Conference, DRC'05
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摘要：
Capacitance - Electric currents - Fermi level - Field effect transistors - MOSFET devices - Nanotechnology
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