Demonstration of a high performance 40-nm-gate carbon nanotube field-effect transistor

被引：0

作者：

IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 ^{[1
]}

不详 ^{[2
]}

机构：

来源：

IEEE Electron Devices Society | 1600年 / 113-114卷 / 2005期

关键词：

Compendex;

D O I：

63rd Device Research Conference, DRC'05

中图分类号：

学科分类号：

摘要：

Capacitance - Electric currents - Fermi level - Field effect transistors - MOSFET devices - Nanotechnology

引用

共 50 条

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