Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor

被引：0
作者：
机构：
[1] SUPA, School of Physics and Astronomy, University of St Andrews, St-Andrews-Fife
[2] Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim
[3] Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Aarhus C
[4] Department of Physics, University of Tokyo, Hongo, Tokyo
[5] Max Planck Institute for Solid State Research, Stuttgart
[6] MAX IV Laboratory, Lund University, P. O. Box 118, Lund
[7] Diamond Light Source, Harwell Campus, Didcot
[8] School of Physics, Suranaree University of Technology, Nakhon Ratchasima
[9] NANOTEC-SUT Center of Excellence on Advanced Functional Nanomaterials, Suranaree University of Technology, Nakhon Ratchasima
[10] Quantum-Phase Electronics Center, Department of Applied Physics, University of Tokyo, Tokyo
[11] RIKEN center for Emergent Matter Science (CEMS), Wako
来源：
King, P.D.C. | 1600年 / Nature Publishing Group卷 / 10期
基金：
日本学术振兴会; 英国工程与自然科学研究理事会;
关键词：
Compendex;
D O I：
10.1038/nphys3105
中图分类号：
学科分类号：
摘要：
Methods to generate spin-polarized electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global structural inversion symmetry. In contrast, here we report the observation from spin- and angle-resolved photoemission spectroscopy of spin-polarized bulk states in the centrosymmetric transition-metal dichalcogenide WSe 2. Mediated by a lack of inversion symmetry in constituent structural units of the bulk crystal where the electronic states are localized, we show how spin splittings up to 0.5 eV result, with a spin texture that is strongly modulated in both real and momentum space. Through this, our study provides direct experimental evidence for a putative locking of the spin with the layer and valley pseudospins in transition-metal dichalcogenides, of key importance for using these compounds in proposed valleytronic devices. © 2014 Macmillan Publishers Limited.
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页码：835 / 839
页数：4
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