Design of k-band substrate integrated waveguide band-pass filter with high rejection

被引:8
作者
Rhbanou, Ahmed [1 ]
Sabbane, Mohamed [1 ]
Bri, Seddik [2 ]
机构
[1] Department of Mathematics, FSM, Moulay Ismail University, Meknes
[2] Material and Instrumentations Group (M IN), Electrical Engineering Department, Moulay Ismail University, Meknes
关键词
Microwave filters; SIW cavity resonator; SIW-microstrip technology; Transition;
D O I
10.1590/2179-10742015v14i2473
中图分类号
学科分类号
摘要
This article presents the design of K-band Substrate Integrated Waveguide (SIW) Band-pass filter with high rejection, by using the topology with iris and the SIW resonators. The simulated results of this filter have shown that the passband is from 17.3 GHz to 19.3 GHz, while the insertion loss is 1.35 dB within 10.9 % bandwidth around 18.3 GHz and input return loss in the passband is better than 15 dB, with high rejection of-57.88 dB at the frequency 24.07 GH. All the structures are designed on a single substrate of Rogers R04003 permittivity 3.55. The compatibility with planar circuits is provided via a specific microstrip transition (microstrip tapered transitions). © 2015 SBMO/SBMag.
引用
收藏
页码:155 / 169
页数:14
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