Dynamic scenarios of multistable switching in semiconductor superlattices

被引：37

作者：

Amann, A. ^{[1
]}

Wacker, A. ^{[1
]}

Bonilla, L.L. ^{[1
]}

Schöll, E. ^{[1
]}

机构：

[1] Institut fur Theoretische Physik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany

来源：

Physical Review E - Statistical, Nonlinear, and Soft Matter Physics | 2001年 / 63卷 / 6 II期

关键词：

Computer simulation - Current density - Current voltage characteristics - Electric charge - Electric currents - Electric field effects - Electric potential - Electron transport properties - Electron tunneling - Switching;

D O I：

10.1103/PhysRevE.63.066207

中图分类号：

学科分类号：

摘要：

An attempt is made to demonstrate that, provided that Ohmic boundary conditions are chosen to model the contact regions, different mechanisms for domain formation occur for different boundary conditions and sizes of the voltage step in domain-wall relocation experiments. Two generic times characterize the transition from unstable to stable operating points on the current-voltage characteristic: a delay time and a switching time.

引用

页码：1 / 066207