Growth and investigation of oxide heterostructures based on half-metallic Fe3O4

被引：0
作者：
Vengalis, B. [1 ,2 ]
Šliziene, K. [1 ]
Lisauskas, V. [1 ]
机构：
[1] Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
[2] Vilnius, Gediminas Tech. University, Sauletekio al. 11, 10223 Vilnius, Lithuania
来源：
Acta Phys Pol A | / 6卷 / 659-665期
关键词：
Compendex;
D O I：
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学科分类号：
摘要：
Carrier concentration - Ceramic materials - Diodes - Ferromagnetism - Film growth - Iron oxides - Magnetic films - Magnetron sputtering - Semiconductor doping - Substrates - Thin films - Tunnel junctions
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