Red-light-emitting diodes with site-selective Eu-doped GaN active layer

被引：0
|
作者：
Sekiguchi, Hiroto [1 ]
Takagi, Yasufumi [2 ]
Otani, Tatsuki [1 ]
Matsumura, Ryota [1 ]
Okada, Hiroshi [1 ,3 ]
Wakahara, Akihiro [1 ]
机构：
[1] Department of Electrical and Electronics Information Engineering, Toyohashi University of Technology, Toyohashi, AI 441-8580, Japan
[2] Central Research Laboratory, Hamamatsu Photonics K.K., Hamamatsu 434-8601, Japan
[3] Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, Toyohashi, AI 441-8580, Japan
来源：
Japanese Journal of Applied Physics | 2013年 / 52卷 / 8 PART 2期
关键词：
542.2 Magnesium and Alloys - 549.2 Alkaline Earth Metals - 701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 741 Light; Optics and Optical Devices - 741.1 Light/Optics - 913.1 Production Engineering;
D O I：
08JH01
中图分类号：
学科分类号：
摘要：
24
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