Red-light-emitting diodes with site-selective Eu-doped GaN active layer

被引：0

作者：

Sekiguchi, Hiroto ^{[1
]}

Takagi, Yasufumi ^{[2
]}

Otani, Tatsuki ^{[1
]}

Matsumura, Ryota ^{[1
]}

Okada, Hiroshi ^{[1
,3
]}

Wakahara, Akihiro ^{[1
]}

机构：

[1] Department of Electrical and Electronics Information Engineering, Toyohashi University of Technology, Toyohashi, AI 441-8580, Japan

[2] Central Research Laboratory, Hamamatsu Photonics K.K., Hamamatsu 434-8601, Japan

[3] Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, Toyohashi, AI 441-8580, Japan

来源：

Japanese Journal of Applied Physics | 2013年 / 52卷 / 8 PART 2期

关键词：

542.2 Magnesium and Alloys - 549.2 Alkaline Earth Metals - 701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 741 Light; Optics and Optical Devices - 741.1 Light/Optics - 913.1 Production Engineering;

D O I：

08JH01

中图分类号：

学科分类号：

摘要：

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