Study of antireflection coatings for high-speed 1.3 -1.55 μm InGaAs/InP pin photodetector

被引：0

作者：

Kolodeznyi E.S. ^{[1
]}

Novikov I.I. ^{[1
,2
]}

Gladyshev A.G. ^{[1
,2
]}

Rochas S.S. ^{[1
]}

Sharipo K.D. ^{[1
]}

Karachinsky L.Ya. ^{[1
,2
]}

Egorov A.Yu. ^{[1
]}

Bougrov V.E. ^{[1
]}

机构：

[1] ITMO University, Kronverkskiy 49, Saint Petersburg

[2] Connector Optics LLC, Domostroitelnaya 16, Saint Petersburg

来源：

Materials Physics and Mechanics | 2017年 / 32卷 / 02期

关键词：

InGaAs/InP photodetector; Silicon nitride coating; Single layer antireflection coating;

D O I：

10.18720/MPM.3222017-11

中图分类号：

学科分类号：

摘要：

Single layer antireflection coatings have been studied for optimization InGaAs/InP photodetector with normal incident light over the 1300-1550-nm wavelength range. Silicon nitride coatings with various thicknesses were fabricated using plasma enhanced chemical vapor deposition and inductively coupled plasma chemical vapor deposition. The antireflection coating with thickness of 200 nm demonstrated reflection below 10 % at 1550 nm wavelength. © 2017, Peter the Great St. Petersburg Polytechnic University.

引用

页码：194 / 197

页数：3