B-doped diamond field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene gate insulator

被引:0
|
作者
Karaya, Ryota [1 ]
Baba, Ikki [1 ]
Mori, Yosuke [1 ]
Matsumoto, Tsubasa [2 ]
Nakajima, Takashi [3 ]
Tokuda, Norio [2 ]
Kawae, Takeshi [2 ]
机构
[1] Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa,920-1192, Japan
[2] College of Science and Engineering, Kanazawa University, Kanazawa,920-1192, Japan
[3] Department of Applied Physics, Tokyo University of Science, Katsushika, Tokyo,125-8585, Japan
来源
Japanese Journal of Applied Physics | 2017年 / 56卷 / 10期
关键词
482.2.1 Gems - 701.1 Electricity: Basic Concepts and Phenomena - 714.2 Semiconductor Devices and Integrated Circuits;
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摘要
47
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