Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent

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[1] Satoh, Yusuke
[2] Usami, Noritaka
[3] Pan, Wugen
[4] Fujiwara, Kozo
[5] Nakajima, Kazuo
[6] Ujihara, Toru
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Satoh, Y. | 1600年 / American Institute of Physics Inc.卷 / 98期
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