Thermal assisted reset modelling in nickel oxide based unipolar resistive switching memory

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作者：
Panda, Debashis [1 ]
Sahu, Paritosh Piyush [1 ]
机构：
[1] Department of Electronics and Communication Engineering, National Institute of Science and Technology, Berhampur, Odisha,761 008, India
来源：
Journal of Applied Physics | 2017年 / 121卷 / 20期
关键词：
Nickel oxide;
D O I：
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摘要：
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