Effect of annealing on the high Co-doped Ti1-xCoxO2 magnetic semiconductor

被引：0

作者：

Song, Hong-Qiang

Wang, Yong

Yan, Shi-Shen

Mei, Liang-Mo

Zhang, Ze

机构：

[1] Department of Space Science and Applied Physics, Shandong University at Weihai, Weihai 264209, China

[2] School of Physics and Microelectronics, Shandong University, Jinan 250100, China

[3] Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

[4] School of Engineering, University of Queensland, QLD 4072, Australia

[5] Beijing University of Technology, Beijing 100022, China

来源：

Wuli Xuebao/Acta Physica Sinica | 2008年 / 57卷 / 07期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

High Co doping concentration Ti1-xCoxO2 magnetic semiconductor films were prepared by rf co-sputtering and then annealed for 2 hours at 200°C, 300°C and 400°C respectively. Microstructure and composition analysis by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) indicated that the films were in the metastable state and the annealing has large effect on their microstructure, composition and magnetism.

引用

页码：4534 / 4538