Near-infrared quantum-cutting emission in Ho3+/Yb3+ co-doped NaY (WO4)2 phosphors

被引:1
作者
Gao, Duan [1 ]
Liu, Shengyi [2 ]
Zhang, Xizhen [1 ]
Zhang, Jinsu [1 ]
Xu, Sai [1 ]
Li, Xiangping [1 ]
Cao, Yongze [1 ]
Wang, Yichao [1 ]
Yu, Hongquan [1 ]
Zhang, Yuhang [1 ]
Sha, Xuezhu [1 ]
Wang, Li [1 ]
Chen, Xin [1 ]
Chen, Baojiu [1 ]
机构
[1] Dalian Maritime Univ, Sch Sci, Dalian 116026, Liaoning, Peoples R China
[2] Dalian Neusoft Univ Informat, Sch Intelligent & Elect Engn, Dalian 116026, Liaoning, Peoples R China
关键词
Silicon-based solar cells; Quantum cutting; Cross-relaxation; Self-quenching; HO3+;
D O I
10.1016/j.optmat.2024.116155
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Enhancing the efficiency of photoelectric conversion is a vital consideration for silicon-based solar cells via introducing near-infrared emitting material. In this study, efficient Yb3+ near infrared emissions through quantum cutting was achieved by adjusting the concentrations of Ho3+ and Yb3+. The quantum cutting mechanism was detailedly investigated and a two-step energy transfer processes from Ho3+ to Yb3+ were assigned to be responsible for the near infrared emission of Yb3+. The radiative and nonradiative transition rates of all concerned 4f levels of Ho3+ in NaY(WO4)(2) (abbreviations as NYW) matrix were derived based on the Judd-Ofelt theory and the energy gap law. The energy transfer rates from Ho3+ to Yb3+ were also obtained by analyzing the fluorescence dynamics. Furthermore, the quantum cutting efficiencies were determined to be 60.46 %. It was revealed that the low quantum-cutting efficiencies resulted from the nonradiative transitions of Ho3+ and the self-quenching of Yb3+ at higher doping concentration of Yb3+.
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页数:9
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