Structural dependence of electronic properties in (101¯0) wurtzite GaN/AlGaN quantum wells

被引：0

作者：

Park, Seoung-Hwan ^{[1
]}

机构：

[1] Dept. of Phys. Semiconductor Sci., Catholic University of Daegu, Hayang, Kyeongbuk, Korea, Republic of

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 04期

关键词：

Band edge - Hole effective mass - Optical matrix element - Scrodinger equation - Spontaneous polarization effect - Tight binding method - Transition energy;

D O I：

10.1143/jjap.41.2084

中图分类号：

学科分类号：

摘要：

引用

页码：2084 / 2089

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