Temperature compensation with AlN film on Y-128° LiNbO3

被引：0

作者：

Wu, S. ^{[1
]}

Wu, L. ^{[1
]}

Chang, F.-C. ^{[1
]}

Chang, J.-H. ^{[1
]}

机构：

[1] Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

来源：

| 2001年 / Japan Society of Applied Physics卷 / 40期

关键词：

Acoustic surface wave devices - Aluminum nitride - Crystal structure - Electrodes - Lithium niobate - Magnetron sputtering - Oscillators (electronic) - Substrates - Thermal effects;

D O I：

10.1143/jjap.40.l471

中图分类号：

学科分类号：

摘要：

Y-128° LiNbO3 is a well-known high-electromechanical-coupling Surface Acoustic Wave (SAW) material, but its usefulness is limited because of its poor temperature-stablility property. AlN films have some excellent characteristics, such as high SAW velocity, stable chemical properties, and high-temperature stability. In this research, the c-axis-oriented AlN films were successfully prepared on Y- 128° LiNbO3 by the sputtering method and a SAW delay line oscillator under various temperatures was used to measure the temperature coefficient of frequency (TCF) value of this structure. For Y-128° LiNbO3 with an AlN layer, the TCF value was from -76.32 (ppm/°C) to -39.04 (ppm/°C) and the improved quantity was 48.8%. The oscillator frequency at 25°C also increased from 40.0909 MHz up to 41.6221 MHz. It exhibited Y-128° LiNbO3 with an AlN layer that will effectively improve the poor temperature stability and enhance the SAW velocity.

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