Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy

被引：0
作者：
Ling, C.C. [1 ]
Beling, C.D. [1 ]
Gong, M. [2 ]
Chen, X.D. [1 ]
Fung, S. [1 ]
机构：
[1] Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong
[2] Department of Physics, Sichuan University, Chengdu, Sichuan 610064, China
来源：
| 2000年 / Scitec Publications Ltd., Zurich卷 / 183期
关键词：
Positron annihilation spectroscopy (PAS);
D O I：
10.4028/www.scientific.net/ddf.183-185.1
中图分类号：
学科分类号：
摘要：
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