Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy

被引：0

作者：

Ling, C.C. ^{[1
]}

Beling, C.D. ^{[1
]}

Gong, M. ^{[2
]}

Chen, X.D. ^{[1
]}

Fung, S. ^{[1
]}

机构：

[1] Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong

[2] Department of Physics, Sichuan University, Chengdu, Sichuan 610064, China

来源：

| 2000年 / Scitec Publications Ltd., Zurich卷 / 183期

关键词：

Positron annihilation spectroscopy (PAS);

D O I：

10.4028/www.scientific.net/ddf.183-185.1

中图分类号：

学科分类号：

摘要：

引用

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