Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy

被引：0

作者：

Ling, C.C. ^{[1
]}

Beling, C.D. ^{[1
]}

Gong, M. ^{[2
]}

Chen, X.D. ^{[1
]}

Fung, S. ^{[1
]}

机构：

[1] Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong

[2] Department of Physics, Sichuan University, Chengdu, Sichuan 610064, China

来源：

| 2000年 / Scitec Publications Ltd., Zurich卷 / 183期

关键词：

Positron annihilation spectroscopy (PAS);

D O I：

10.4028/www.scientific.net/ddf.183-185.1

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[21] Deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H-SiC [J].

Gong, M. ;

Fung, S. ;

Beling, C.D. ;

You, Zhipu .

Journal of Applied Physics, 1999, 85 (10)

[22] A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H-SiC [J].

Gong, M ;

Fung, S ;

Beling, CD ;

You, SP .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7120-7122

[23] Cathodoluminescence deep level spectroscopy of etched and in-situ annealed 6H-SiC [J].

Young, AP ;

Aptowitz, K ;

Brillson, LJ .

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 :137-142

[24] DEFECT CHARACTERIZATION IN SEMICONDUCTORS BY POSITRON-ANNIHILATION SPECTROSCOPY [J].

ROHATGI, A ;

SCHAFFER, JP ;

DEWALD, AB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) :C373-C373

[25] Perspective on defect characterization in semiconductors by positron annihilation spectroscopy [J].

Makkonen, Ilja ;

Tuomisto, Filip .

JOURNAL OF APPLIED PHYSICS, 2024, 135 (04)

[26] Characterization of defect levels in semi-insulating 6H-SiC by means of photoinduced transient spectroscopy and modulated photocurrent technique [J].

Longeaud, C. ;

Kleider, J. P. ;

Kaminski, P. ;

Kozlowski, R. ;

Miczuga, M. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (04)

[27] Optical transitions of the silicon vacancy in 6H-SiC studied by positron annihilation spectroscopy -: art. no. 075206 [J].

Arpiainen, S ;

Saarinen, K ;

Hautojärvi, P ;

Henry, L ;

Barthe, MF ;

Corbel, C .

PHYSICAL REVIEW B, 2002, 66 (07) :752061-7520610

[28] Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy -: art. no. 023523 [J].

Brauer, G ;

Anwand, W ;

Skorupa, W ;

Brandstetter, S ;

Teichert, C .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (02) :1-8

[29] Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene / 6H-SiC Field Effect Transistors [J].

Roensch, Sebastian ;

Hertel, Stefan ;

Reshanov, Sergey ;

Schoener, Adolf ;

Krieger, Michael ;

Weber, Heiko B. .

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 :436-+

[30] E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy [J].

Koizumi, A. ;

Markevich, V. P. ;

Iwamoto, N. ;

Sasaki, S. ;

Ohshima, T. ;

Kojima, K. ;

Kimoto, T. ;

Uchida, K. ;

Nozaki, S. ;

Hamilton, B. ;

Peaker, A. R. .

APPLIED PHYSICS LETTERS, 2013, 102 (03)

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