Transient charging and relaxation in high-k gate dielectrics and their implications

被引：0

作者：

Lee, Byoung Hun ^{[1
,2
]}

Young, Chadwin ^{[1
]}

Choi, Rino ^{[1
]}

Sim, Jang Hwan ^{[1
]}

Bersuker, Gennadi ^{[1
]}

机构：

[1] International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, United States

[2] IBM Assignee, 2706 Montopolis Drive, Austin, TX 78741, United States

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 4 B期

关键词：

Capacitance - Carrier mobility - Electric breakdown - Electric potential - Electrodes - MOS devices;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Recent results on device instability indicate that the methodologies developed for electrical characterization of metal oxide semiconductor (MOS) devices with SiCO2 gate dielectric may not be sufficiently accurate for high-k devices. While the physical origin of the instabilities in high-k devices is yet to be identified, it is found that many of the abnormal electrical characteristics of high-k devices can be explained by assuming fast and slow transient chargings in high-k dielectric. In this paper, transient charging effects in high-k gate dielectrics are reviewed and their implications on test methodologies are discussed. ©2005 The Japan Society of Applied Physics.

引用

页码：2415 / 2419