Thermally stable and low resistance Ru ohmic contacts to n-ZnO

被引：0
|
作者：
Kim, Han-Ki [1 ]
Kim, Kyoung-Kook [1 ]
Park, Seong-Ju [1 ]
Seong, Tae-Yeon [2 ]
Yoon, Young Soo [1 ]
机构：
[1] Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea, Republic of
[2] Thin Film Technology Research Center, Korea Institute of Science and Technology (KIST), P.O. Box 131, Cheongryang, Seoul 130-650, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2002年 / 41卷 / 5 B期
关键词：
D O I：
10.1143/jjap.41.l546
中图分类号：
学科分类号：
摘要：
Zinc oxide
引用
收藏
相关论文
共 50 条
  • [21] Thermally stable ZrN/Zr/n-GaN ohmic contacts
    Wolter, SD
    Luther, BP
    Mohney, SE
    Karlicek, RF
    Kern, RS
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (03) : 151 - 153
  • [22] Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN
    Kumar, V
    Zhou, L
    Selvanathan, D
    Adesida, I
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (03) : 1712 - 1714
  • [23] Pt-Ga Ohmic contacts to n-ZnO using focused ion beams
    Inumpudi, A
    Iliadis, AA
    Krishnamoorthy, S
    Choopun, S
    Vispute, RD
    Venkatesan, T
    SOLID-STATE ELECTRONICS, 2002, 46 (10) : 1665 - 1668
  • [24] THERMALLY STABLE LOW RESISTANCE OHMIC CONTACTS TO N-TYPE GALLIUM-ARSENIDE - MAGNETRON CATHODIC SPUTTER-DEPOSITED NIINW CONTACTS
    HUGON, MC
    AGIUS, B
    VARNIERE, F
    DUBONCHEVALLIER, C
    BRESSE, JF
    FROMENT, M
    APPLIED PHYSICS LETTERS, 1991, 58 (24) : 2773 - 2775
  • [25] Pt-ga ohmic contacts to n-ZnO using focused ion beams
    Inumpudi, A
    Iliadis, AA
    Krishnamoorthy, S
    Choopun, S
    Vispute, RD
    Venkatesan, T
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 220 - 223
  • [26] Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN
    Reddy, VR
    Kim, SH
    Song, JO
    Seong, TY
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (06) : 541 - 544
  • [27] Low resistance, thermally stable Au/Pt/Ti/WSiN ohmic contacts on n+-InGaAs/n-GaAs layer systems
    E. Nebauer
    M. Mai
    E. Richter
    J. Würfl
    Journal of Electronic Materials, 1998, 27 : 1372 - 1374
  • [28] Low resistance, thermally stable Au/Pt/Ti/WSiN ohmic contacts on n+-InGaAs/n-GaAs layer systems
    Nebauer, E
    Mai, M
    Richter, E
    Würfl, J
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (12) : 1372 - 1374
  • [29] Formation mechanisms of low-resistance and thermally stable Pd/Ni/Pd/Ru Ohmic contacts to Mg-doped Al0.15Ga0.85N
    Janga, Ja-Soon
    Seong, Tae-Yeon
    Jeon, Seong-Ran
    APPLIED PHYSICS LETTERS, 2007, 91 (09)
  • [30] Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO
    Ip, K
    Baik, KH
    Heo, YW
    Norton, DP
    Pearton, SJ
    LaRoche, JR
    Luo, B
    Ren, F
    Zavada, JM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 2378 - 2381
12345