Research on the protection scheme of IGBT valve in VSC-HVDC system

被引：0
|
作者：
Zhang Y. [1 ]
Du S. [1 ]
Ma J. [1 ]
Dong G. [1 ]
机构：
[1] Key Laboratory of Smart Grid of Ministry of Education, Tianjin University, Tianjin
来源：
Dianji yu Kongzhi Xuebao/Electric Machines and Control | 2023年 / 27卷 / 12期
关键词：
differential current; insulated-gate bipolar transistor; valve on-state function; valve open circuit; valve short circuit; voltage source converter based high voltage direct current;
D O I：
10.15938/j.emc.2023.12.004
中图分类号：
学科分类号：
摘要：
For the voltage source converter based high voltage direct current transmission (VSC-HVDC), the balance relationship between the AC and DC currents on both sides of the voltage source converter under normal operation was analyzed. Then, according to the conducting state of the bridge arm the five switching modes of the converter were divided into two types of operating states, the current flow paths of the insulated-gate bipolar transistor (IGBT) short circuit and open circuit under different operating states were analyzed, and the changes of AC-side current amplitude and DC-side current after the fault and their interrelationships were studied. On this basis, a protection scheme that can reflect the IGBT valve short circuit and valve open circuit was proposed, which multiplies the AC-side three-phase current sampling value and their on-state functions respectively and then sums them, and a differential current was formed with the DC-side current sampling value. The differential current was used to reflect the valve short circuit and valve open circuit, and the setting principle of the protection was given. Finally, the VSC-HVDC system model was built based on the simulation platform, and effectiveness of the proposed protection scheme was verified by simulation. © 2023 Editorial Department of Electric Machines and Control. All rights reserved.
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页码：31 / 40
页数：9
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