Simulation on chemical mechanical polishing using atomic force microscope

被引：0

作者：

Miyoshi, Atsushi ^{[1
]}

Matsukawa, Koei ^{[1
]}

Matsuo, Hiroshi ^{[1
]}

Sakai, Tadayuki ^{[1
]}

Nozue, Masaru ^{[1
]}

机构：

[1] Advanced Technology R and D Center, Mitsubishi Electric Corporation, Amagasaki-shi, Hyogo, 661-8661

来源：

Nihon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C | 2005年 / 71卷 / 01期

关键词：

Atomic Force Microscope; Chemical Mechanical Polishing; Micro-Contact Mechanics;

D O I：

10.1299/kikaic.71.280

中图分类号：

学科分类号：

摘要：

A micro-contact model for chemical mechanical polishing (CMP) of Si wafer is presented. The model is developed on the basis of the Greenwood-Williamson micro-contact mechanics. The atomic force microscope (AFM) is used as a polishing test apparatus to evaluate the removal rate by a single particle in CMP slurry. Using this model and AFM, the simulation on polishing of SiO 2 is performed. The model is evaluated by comparing the simulated polishing rate and that experimentally determined by real CMP processes. The validity of the AFM wear test and the contact model proposed is discussed.

引用

页码：280 / 285

页数：5

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