Lateral epitaxial overgrowth of fully coalesced a-plane GaN on r-plane sapphire

被引：0

作者：

Chen, Changqing ^{[1
]}

Yang, Jinwei ^{[1
]}

Wang, Hongmei ^{[1
]}

Zhang, Jianping ^{[1
]}

Adivarahan, Vinod ^{[1
]}

Gaevski, Mikhail ^{[1
]}

Kuokstis, Edmundas ^{[1
]}

Gong, Zheng ^{[1
]}

Su, Ming ^{[1
]}

Khan, Muhammad Asif ^{[1
]}

机构：

[1] Department of Electrical Engineering, University of South Carolina, Columbia

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 2003年 / 42卷 / 6 B期

关键词：

A-plane; ELOG; GaN; Non-polar; Stimulated emission; Wing tilt;

D O I：

10.1143/jjap.42.l640

中图分类号：

学科分类号：

摘要：

Fully coalesced epitaxial laterally overgrown a-plane GaN films were characterized for their structural and optical quality. The films had a very smooth surface with a root mean square roughness as low as 4.6 Å for a 5 μm × 5 μm atomic force microscope scan area. They exhibited a wing tilt of only 0.27° and optically pumped stimulated emission, which establish their high structural and optical quality. These non-polar films are ideal for fabricating high-efficiency optoelectronic and electronic devices.

引用

页码：L640 / L642

页数：2