Lateral epitaxial overgrowth of fully coalesced a-plane GaN on r-plane sapphire

被引：0

作者：

Chen, Changqing ^{[1
]}

Yang, Jinwei ^{[1
]}

Wang, Hongmei ^{[1
]}

Zhang, Jianping ^{[1
]}

Adivarahan, Vinod ^{[1
]}

Gaevski, Mikhail ^{[1
]}

Kuokstis, Edmundas ^{[1
]}

Gong, Zheng ^{[1
]}

Su, Ming ^{[1
]}

Khan, Muhammad Asif ^{[1
]}

机构：

[1] Department of Electrical Engineering, University of South Carolina, Columbia

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 2003年 / 42卷 / 6 B期

关键词：

A-plane; ELOG; GaN; Non-polar; Stimulated emission; Wing tilt;

D O I：

10.1143/jjap.42.l640

中图分类号：

学科分类号：

摘要：

Fully coalesced epitaxial laterally overgrown a-plane GaN films were characterized for their structural and optical quality. The films had a very smooth surface with a root mean square roughness as low as 4.6 Å for a 5 μm × 5 μm atomic force microscope scan area. They exhibited a wing tilt of only 0.27° and optically pumped stimulated emission, which establish their high structural and optical quality. These non-polar films are ideal for fabricating high-efficiency optoelectronic and electronic devices.

引用

页码：L640 / L642

页数：2

共 11 条

[1]

Bernardini F., Fiorentini V., Phys. Rev., B57, (1998)

[2]

Waltereit P., Brandt O., Trampert A., Grahn H.T., Menniger J., Ramsteiner M., Reiche M., Ploog K.H., Nature (London), 406, (2000)

[3]

Chen C.Q., Gaevski M.E., Sun W.H., Kuokstis E., Zhang J.P., Fareed R.S.Q., Wang H.M., Yang J.W., Simin G., Khan M.A., Maruska H.P., Hill D.W., Chou M.M.C., Chai B.H., Appl. Phys. Lett., 81, (2002)

[4]

Kuokstis E., Chen C.Q., Gaevski M.E., Sun W.H., Yang J.W., Simin G., Khan M.A., Maruska H.P., Hill D.W., Chou M.C., Gallagher J.J., Chai B.H., Appl. Phys. Lett., 81, (2002)

[5]

Ng H.M., Appl. Phys. Lett., 80, (2002)

[6]

Craven M.D., Lim S.H., Wu F., Speck J.S., DenBaars S.P., Appl. Phys. Lett., 81, (2002)

[7]

Sun W.H., Kuokstis E., Gaevski M.E., Zhang J.P., Chen C.Q., Wang H.M., Yang J.W., Khan M.A., Gaska R., Shur M.S., Appl. Phys. Lett.

[8]

Kuokstis E., Sun W.H., Gaevski M.E., Zhang J.P., Chen C.Q., Wang H.M., Yang J.W., Simin G., Khan M.A., Gaska R., Shur M.S., Appl. Phys. Lett.

[9]

Craven M.D., Lim S.H., Wu F., Speck J.S., DenBaars S.P., Appl. Phys. Lett., 81, (2002)

[10]

Katona T.M., Craven M.D., Fini P.T., Speck J.S., DenBaars S.P., Appl. Phys. Lett., 79, (2001)

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