In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

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机构：

[1] Cantas, Ayten

[2] Aygun, Gulnur

[3] Basa, Deepak Kumar

来源：

Aygun, G. (gulnuraygun@iyte.edu.tr) | 1600年 / American Institute of Physics Inc.卷 / 116期

关键词：

Silicon oxides - Substrates - Spectroscopic ellipsometry - X ray diffraction - Crystalline materials - Interfaces (materials) - Depth profiling - Fourier transform infrared spectroscopy - Silica - Indium compounds - Magnetron sputtering - Hafnium oxides - Silicon - Buffer layers - Gate dielectrics;

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