Electrical transport through a scanning tunnelling microscope tip and a heavily doped Si contact

被引：0

作者：

Zhang, Xieqiu ^{[1
,2
]}

Wang, Kedong ^{[2
]}

Chen, Wenjin ^{[3
]}

Loy, M.M.T. ^{[3
]}

Wang, J.N. ^{[3
]}

Xiao, Xudong ^{[1
,2
]}

机构：

[1] [1,Zhang, Xieqiu

[2] Wang, Kedong

[3] Chen, Wenjin

[4] Loy, M.M.T.

[5] Wang, J.N.

[6] 1,Xiao, Xudong

来源：

Zhang, X. (xq.zhang@siat.ac.cn) | 1600年 / American Institute of Physics Inc.卷 / 114期

关键词：

By allowing the metallic tip of a scanning tunnelling microscope to penetrate a Si(111) sample at 5 K; we found that the electrical transport through the tip and the heavily doped Si(111) contact undergoes a transition from rectifying to ohmic behavior. This transition does not occur when the tip penetrates a moderately doped Si(111). This observed ohmic behavior when the Si(111) is heavily doped is semi-quantitatively simulated only by a vanishingly small Schottky barrier height; suggesting that the Schottky barrier height can be affected by the doping concentration in the semiconductor. © 2013 AIP Publishing LLC;

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摘要：

Journal article (JA)

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